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TGA2576-FL 2.5 to 6 ghz gan hemt power amplifier preliminary data sheet: rev a 08/25/11 - 1 of 11 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? applications ? communications ? electronic warfare ? test instrumentation ? emc amplifier product features functional block diagram ? frequency range: 2.5 ? 6 ghz ? psat: 45.5 dbm @ pin = 26 dbm ? pae: 35 % ? small signal gain: 26 db ? bias: vd = 30 v, idq = 1.55 a, vg = -3.3 v typical ? dimensions: 11.4 x 17.3 x 3.0 mm 1 2 3 4 56 7 8 9 10 general description pin out configuration triquint?s TGA2576-FL is a packaged wideband power amplifier fabricated on triquint?s production-released 0.25um gan on sic process. operating from 2.5 ghz to 6 ghz, it achieves 45.5 dbm saturated output power, 35% pae and 26 db small signal gain. fully matched to 50 ohms and with integrated dc blocking caps on both i/o ports, the TGA2576-FL is ideally suited to support both commercial and defense related opportunities. pin # symbol 1,5 vg 2,4,7,9 nc 3 rf in 6 vd bot 8 rf out 10 vd top ordering information part no. eccn description TGA2576-FL 3a001.b.2.a 2.5-6 ghz power amplifier www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2576-FL 2.5 to 6 ghz gan hemt power amplifier preliminary data sheet: rev a 08/25/11 - 2 of 11 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain to gate voltage, vd - vg 80 v drain voltage,vd 40 v gate voltage,vg -10 to 0 v drain current, id 4500 ma gate current, ig -18 to 50 ma power dissipation, pdiss 84 w rf input power, cw , 50 ? ,t = 25oc 28 dbm channel temperature, tch 275 o c mounting temperature (30 seconds) 260 o c storage temperature -40 to 150 o c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter min typical max units vd 30 v idq 1550 ma id_drive (under drive) 2500 - 3500 ma rf 4000 vg -3.3 v electrical specifications are m easured at specified test cond ons. spe recommended ope electrical specifications test conditions unless otherwise noted: 25 oc, vd = 30 v, idq = 1550 ma, vg = -3.3 v typical. iti cifications are not guaranteed over all rating conditions. parameter min typical max units operational frequency range 2.5 6 ghz small signal gain 26 db output power @ saturation 45.5 dbm power-added efficiency 35 % gain temperature coefficient - 0.04 db/c power temperature coefficient - 0.02 dbm/c www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2576-FL 2.5 to 6 ghz gan hemt power amplifier preliminary data sheet: rev a 08/25/11 - 3 of 11 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications (cont.) ation thermal and reliability inform parameter condition rating thermal resistance, jc , measure d to back age tbase = 85 c = 1.47 c/w of pack jc channel temperat ure (tch), and median m) t , idq = 1 w = 153 c . h lifetime (t base = 85 c, vd = 30 550 ma, pdiss = 46.5 v tch tm = 5 5 e+7 ours channel tempera ture (tch), and media ) t 5 c, vd = 30 v, d = = 180 c = 6.3 e+6 h s n lifetime (tm under rf drive base = 8 i p 3 a, pout = 44 dbm, diss = 64.9 w 000 m tch tm our kside of packa note: thermal model to bac ge 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 m 1e+11 t 1e+12 1e+1 (h 3 our 1e+14 s) 1e+15 25 50 75 100 125 150 175 200 225 250 275 median lif channel temperature, tch (c) m) vs. channel temperature (tch) fet7 eti e, m median lifetime (t www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2576-FL 2.5 to 6 ghz gan hemt power amplifier preliminary data sheet: rev a 08/25/11 - 4 of 11 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance 0 5 20 22.533.544.555.56 (d frequency (ghz) vd = 30 v, idq = 1.55 a, vg = -3.3 v 10 15 gain 25 b) 30 35 gain vs. frequency 25 c 0 20 25 22.533.544.555.566.57 frequency (ghz) return loss vs. frequency vd = 30 v, idq = 1.55 , 25 c 5 10 orl (db 15 irl and ) a, vg = -3.3 v irl orl 42 43 44 45 46 47 48 49 50 22.533.544.555.56 saturated output power (dbm) frequency (ghz) saturated output power vs. frequency vd = 30 v, idq = 1.55 a, vg = -3.3 v, 25 c pin = 26 dbm 0 1 2 3 4 5 22.533.544.555.56 id (a) frequency (ghz) drain current vs. frequency vd = 30 v, idq = 1.55 a, vg = -3.3 v, 25 o c pin = 26 dbm 0 10 20 30 40 50 60 70 22.533.544.555.56 pae (%) frequency (ghz) pae vs. frequency vd = 30 v, idq = 1.55 a, vg = -3.3 v, 25 c pin = 26 dbm 36 38 40 42 44 46 10 12 14 16 18 20 22 24 26 28 output pout (dbm) input power (dbm) output pout vs. input power vs. frequency vd = 30 v, idq = 1.55 a, vg = -3.3 v, 25 c 2.5 ghz 4.0 ghz 6.0 ghz pin = 26 dbm www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2576-FL 2.5 to 6 ghz gan hemt power amplifier preliminary data sheet: rev a 08/25/11 - 5 of 11 - disclaimer: sub j ect to chan g e without notice typical performance ( cont.) 40 41 42 43 44 45 46 47 48 49 50 22.533.544.555.56 saturated output power (dbm) frequency (ghz) power vs. frequency vs. temperature vd = 30 v, idq = 1.55 a, vg = -3.3 v ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? 25 c 85 c pin = 26 dbm 0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5 5.5 6 id (a) frequency (ghz) current vs. frequency vs. temperature vd = 30 v, idq = 1.55 a, vg = -3.3 v pin = 26 dbm 25 c 85 c 0 10 20 30 40 50 60 70 22.533.544.555.56 pae (%) frequency (ghz) pae vs. frequency vs. temperature vd = 30 v, idq = 1.55 a, vg = -3.3 v 85 c 25 c pin = 26 dbm pin = 26 dbm 0 5 10 15 20 25 30 35 22.533.544.555.56 gain (db) frequency (ghz) gain vs. frequency vs. temperature vd = 30 v, idq = 1.55 a, vg = -3.3 v pin = 10 dbm 25 c 85 c 15 20 25 30 35 40 45 50 55 24 26 28 30 32 34 36 38 40 42 44 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. frequency vd = 30 v, idq = 1.55 a, vg = -3.3 v typical, +25 0 c 2.5ghz 4ghz 5ghz 6ghz -50 -45 -40 -35 -30 -25 -20 24 26 28 30 32 34 36 38 40 42 44 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. frequency vd = 30 v, idq = 1.55 a, vg = -3.3 v typical, +25 0 c 15 20 25 30 35 40 45 50 55 24 26 28 30 32 34 36 38 40 42 44 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. frequency vd = 30 v, idq = 1.55 a, vg = -3.3 v typical, +85 0 c 2.5ghz 4ghz 5ghz 6ghz 2.5ghz 4ghz 5ghz 6ghz -50 -45 -40 -35 -30 -25 -20 24 26 28 30 32 34 36 38 40 42 44 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. frequency vd = 30 v, idq = 1.55 a, vg = -3.3 v typical, +85 0 c 2.5ghz 4ghz 5ghz 6ghz www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2576-FL 2.5 to 6 ghz gan hemt power amplifier preliminary data sheet: rev a 08/25/11 - 6 of 11 - disclaimer: sub j ect to chan g e without notice application circuit vg can be biased from either side (pins 1 or 5). vd must be biased from both sides (pins 6 and 10). TGA2576-FL rf in 1uf 1 0.1uf vd 10 rf out 0.1uf 1uf 0.1uf 1uf c1 c5 c4 c8 c3 c7 vg c6 1uf vg c2 0.1uf 2 3 4 5 6 7 8 9 bias-up procedure bias-down procedure vg set to -5.0 v turn off rf signal vd set to +30 v reduce vg to -5.0 v. ensure id ~ 0 ma adjust vg more positive until quiescent id is 1400 ma. this will be ~ vg = -3.3 v typical set vd to 0 v apply rf signal set vg to 0 v ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2576-FL 2.5 to 6 ghz gan hemt power amplifier preliminary data sheet: rev a 08/25/11 - 7 of 11 - disclaimer: sub j ect to chan g e without notice pin des cription ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? pin symbol description 3 rf in inpu t, matched to 50 ohms. 1 2 3 4 56 7 8 9 1 0 1 vg gate voltage. see note 1. 10 vd top top drain voltage. see note 2. 8 rf out output, matched to 50 ohms. 6 vd bot bottom drain voltage. see note 2 . 5 vg gate voltage. see note 1. 2,4,7,9 n/c no internal connection; m ay be gro pen on pcb unded or left o (package rf base) and dc ground notes: 1. bias network is required; can be biased from either side (pin 1 or pin 5); see application circuit on page 6 as an example. 2. bias network is required; must be biased from both sides (pins 6 and 10); see application circuit on page 6 as an example. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2576-FL 2.5 to 6 ghz gan hemt power amplifier preliminary data sheet: rev a 08/25/11 - 8 of 11 - disclaimer: sub j ect to chan g e without notice evaluation board layout c2 c1 c3 c4 c5 c6 c7 c8 vd vg vg vd bill of material re f des value description manufacturer part number - c4 various c1 0.1 uf cap, 0603, 50v, 10%, x7r c5 -c8 various 1 uf cap, 1206, 50v, 10%, x7r ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2576-FL 2.5 to 6 ghz gan hemt power amplifier preliminary data sheet: rev a 08/25/11 - 9 of 11 - disclaimer: sub j ect to chan g e without notice mechanical information package information and dimensions all dimensions are in millimeters. notes: 1. unless specified otherwise, dimensions are in millimeters 2. unless specified otherwise, tolerance are +/- 0.127 e: copper ) com : lcp (liquid lymer) ds: kovar, mil class 1 plating finish: gold (au) 1.27um minimum over nickel (ni) 2.54-8.89um 4, part marking: yy part assembly year ww part assembly week mxxx batch id ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? 3. materials: package bas tu n gsten (cuw po site package lid package lea crystal po i 23011c 1.37 8.69 11.43 2.95 4.22 4.72 4x 1.02 4x 2.29 8.89 1.27 4x ?1.78 10x .254 8.89 14.63 1.35 17.32 10x 2.54 ` 0.25 3.00 0.25 10x .127 1.07 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2576-FL 2.5 to 6 ghz gan hemt power amplifier preliminary data sheet: rev a 08/25/11 - 10 of 11 - disclaimer: sub j ect to chan g e without notice product compliance information esd rating: tbd value: passes tbd v min. test: human body model (hbm) standard: jedec standard jesd22-a114 msl rating level tbd at +260 c convection reflow the part is rated mo isture sensitivity level tbd at 260c per jedec standard ipc/jedec j-std-020. solderability this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce 3a001.b.2.a esd information assembly notes 1. 0-80 screws are recommended for mounting the TGA2576-FL. 2. we recommend attaching a heat sink to the base of the TGA2576-FL. use a thermal compound or 4 mils indium shim between the heat sink and the tga2576-f base. 3. apply solde pin of the TGA2576-FL. l r to each ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2576-FL 2.5 to 6 ghz gan hemt power amplifier preliminary data sheet: rev a 08/25/11 - 11 of 11 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, triquint: additional product information, worldwi n locations, and information abou t web: www.triquint.com de sales and distributio tel: +1.97 email: info-sales@tqs.com 2.994.8465 fax: and application information : + 1.972.994.8504 for technical questions email: info-products@tqs.com important notice uint makes no warranties regarding the information contained ty or liability whatso ever for any of the information contained herein. triquint sumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained ovided "as is, where is" and with all faults, and th e entire risk associated with such information is entirely with ll information contained herein is subject to change without notice. customers should obtain and verify the latest for triquint products. the information contained herein or any use of such plicitly, to any part y any patent rights, licenses, or any other intellectual prope rty ghts, whether with regard to such information itself or anything described by such information. riquint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining plications, or other applications where a failure would reason ably be expected to cause severe personal injury or death. the information contained herein is believed to be reliable. triq herein. triquint assumes no responsibili as he rein is pr the user. a relevant information before placing orders information does not grant, explicitly or im ri t ap www.datasheet.net/ datasheet pdf - http://www..co.kr/

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